RT3TBBM Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

PRELIMINARY
RT3TBBM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3TBBM is compound transistor built with RT1N231
chip and RT1P231 chip in SC-88 package.
OUTLINE DRAWING
Unit：mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
⑥
⑤
④
RTr1
R1
R2
R2
R1
①
②
RTr2
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base voltage
50
VEBO
Emitter to Base voltage
10
VCEO
Collector to Emitter voltage
50
VIN
Input voltage
12
IC
Collector current
100
ICM
Peak Collector current
200
PC
Collector dissipation（Total, Ta=25℃）
150
Tj
Junction temperature
＋150
Tstg
Storage temperature
-55～＋150
※PNP built in transistor of ”－”sign is abbreviation.
UNIT
V
V
V
V
mA
mA
mW
℃
℃
MARKING
⑥⑤④
.^{T B B}
①②③
ISAHAYA ELECTRONICS CORPORATION