RT3T77M Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

PRELIMINARY
RT3T77M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3T77M is compound transistor built with RT1N140
chip and RT1P140 chip in SC-88 package.
OUTLINE DRAWING
Unit：mm
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
.
⑥
⑤
④
RTr1
R1
RTr2
R1
①
②
③
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
③：COLLECTOR2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃) (RTr1_NPN, RTr2_PNP)
SYMBOL
PARAMETER
RATING
VCBO
Collector to Base voltage
50
VEBO
Emitter to Base voltage
6
VCEO
IC
ICM
PC
Tj
Tstg
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation（Total, Ta=25℃）
Junction temperature
Storage temperature
50
100
200
150
＋150
-55～＋150
※PNP built in transistor of ”－”sign is abbreviation.
UNIT
V
V
V
mA
mA
mW
℃
℃
MARKING
654
.^{T7 7}
１23
ISAHAYA ELECTRONICS CORPORATION