RT3T22M Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type

PRELIMINARY
RT3T22M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3T22M is a composite transistor built with
RT1N241 chip and RT1P241 chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
ᶃ
ᶈ
ᶄ
ᶇ
ᶅ
ᶆ
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
Unitɿmm
˞PNP built in transistor
of ”ʵ”sign is abbreviation.
ᶈ
ᶇ
ᶆ

RTr1
R1
R2
R2
R1
ᶃ
ᶄ
RTr2
ᶅ
TERMINAL
CONNECTOR
ᶃɿEMITTER1
ᶄɿBASE1
ᶅɿCOLLECTOR2
ᶆɿEMITTER2
ᶇɿBASE2
ᶈ:COLLECTOR1
JEITAÉ¿SC-88

MAXIMUM RATING (Ta=25ˆ)
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg


PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipationʢTotal, Ta=25ˆʣ
Junction temperature
Storage temperature
RATING
50
10
50
100
200
150
Ê´150
-55ʙʴ150
UNIT
V
V
V
mA
mA
mW
ˆ
ˆ
MARKING




.^{5 }
̍ 




ISAHAYA ELECTRONICS CORPORATION