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RT3PFFM Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type | |||
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DESCRIPTION
RT3PFFM is composite transistor built with two
RT1P431 chips in SC-88 package.
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
APPLICATION
Inverted circuit, Switching circuit,
Interface circuit, Driver circuit
RT3PFFM
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
2.1
1.25
â
â¥
â¡
â¤
â¢
â£
Unitï¼mm
â¥â¤â£
R1 R2
RTr1
RTr2
R2 R1
â â¡â¢
TERMINAL
CONNECTOR
â ï¼EMITTER1
â¡ï¼BASE1
â¢ï¼COLLECTOR2
â£ï¼EMITTER2
â¤ï¼BASE2
â¥ï¼COLLECTOR1
JEITAï¼SC-88
JEDECï¼ï¼
MAXIMUM RATING(Ta=25â)(RTr1, RTr2 COMMON)
SYMBOL
VCBO
VEBO
VCEO
VIN
IC
ICM
PT
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Input voltage
Collector current
Peak Collector current
Total dissipation
Junction temperature
Storage temperature
RATING
-50
-10
-50
-30
-100
-200
200
ï¼150
-55ï½ï¼150
UNIT
V
V
V
V
mA
mA
mW
â
â
ELECTRICAL CHARACTERISTICS(Ta=25â)(RTr1, RTr2 COMMON)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2/R1
fT
Collector to Emitter breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
I C=-100µAï¼RBE=â
VCB=-50Vï¼I E =0
VEB=-5Vï¼I C =0
VCE=-5Vï¼I C =-10mA
I C =-10mAï¼I B =-0.5mA
VCE=-0.2Vï¼I C =-5mA
VCE=-5Vï¼I C =-100µA
ï¼
ï¼
VCE=-6Vï¼I E =10mA
MARKING
654
P. F F
ï¼23
MIN
-50
ï¼
-399
20
ï¼
ï¼
-0.8
3.3
0.8
ï¼
LIMITS
TYP
ï¼
ï¼
-532
ï¼
-0.1
-1.4
-1.1
4.7
1.0
150
MAX
ï¼
-0.1
-771
ï¼
-0.3
-2.3
ï¼
6.1
1.2
ï¼
UNIT
V
µA
µA
ï¼
V
V
V
kâ¦
ï¼
MHz
ISAHAYA ELECTRONICS CORPORATION
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