RT3NDDM Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor

PRELIMINARY
RT3NDDM
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT3NDDM is a composite transistor built with two
RT1N237 chips in SC-88 package.
FEATURE
Silicon NPN epitaxial type
Built in bias resistor (R1=2.2k R2=47k )
Each transistor elements are independent.
Mini package for easy mounting
OUTLINE DRAWING
2.1
1.25
Unit mm
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
TERMINAL
CONNECTOR
EMITTER1
BASE1
COLLECTOR2
EMITTER2
BASE2
:COLLECTOR1
JEITA SC-88
MAXIMUM RATING (Ta=25 )
SYMBOL
V_CBO
V_EBO
V_CEO
I_C
I_CM
P_C
T_j
T_stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation Total, Ta=25
Junction temperature
Storage temperature
RATING
50
10
50
100
200
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
MARKING
.
ISAHAYA ELECTRONICS CORPORATION