RT3N66M Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor

PRELIMINARY
RT3N66M
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
DESCRIPTION
RT3N66M is a composite transistor built with
RT1N430 chip and RT1N430 chip in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
Silicon epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
ᶃ
ᶈ
ᶄ
ᶇ
ᶅ
ᶆ
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
Unitɿmm
ᶈ
RTr1
ᶇ
ᶆ

R1
R2
RTr2
R1
ᶃ
ᶄ
ᶅ
TERMINAL
CONNECTOR
ᶃɿEMITTER1
ᶄɿBASE1
ᶅɿCOLLECTOR2
ᶆɿEMITTER2
ᶇɿBASE2
ᶈ:COLLECTOR1
JEITAÉ¿SC-88

MAXIMUM RATING (Ta=25ˆ)
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg


PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipationʢTotal, Ta=25ˆʣ
Junction temperature
Storage temperature
RATING
50
6
50
100
200
150
Ê´150
-55ʙʴ150
UNIT
V
V
V
mA
mA
mW
ˆ
ˆ
MARKING
ᶈᶇᶆ
.^{/ }
ᶃᶄᶅ


ISAHAYA ELECTRONICS CORPORATION