RT3N55M Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Composite Transistor With Resistor

PRELIMINARY
RT3N55M
Composite Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT3N55M is a composite transistor built with two
RT1N144 chips in SC-88 package.
FEATURE
Silicon NPN epitaxial type
Each transistor elements are independent.
Mini package for easy mounting
OUTLINE DRAWING
2.1
1.25
Unit mm
APPLICATION
Inverted circuit, switching circuit,
interface circuit, driver circuit
RTr1
R1
R2
R2
R1
RTr2
TERMINAL
CONNECTOR
EMITTER1
BASE1
COLLECTOR2
EMITTER2
BASE2
:COLLECTOR1
JEITA SC-88
MAXIMUM RATING (Ta=25 )
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation Total, Ta=25
Junction temperature
Storage temperature
RATING
50
6
50
100
200
150
150
-55 150
UNIT
V
V
V
mA
mA
mW
MARKING
.
ISAHAYA ELECTRONICS CORPORATION