RT3K44M Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor For high speed switching Silicon N-channel MOSFET

RT3K44M
Composite Transistor
For high speed switching
Silicon N-channel MOSFET
DESCRIPTION
RT3K44M is a composite transistor built with two OUTLINE DRAWING
INK0010AX chips in SC-88 package.
2.1
FEATURE
1.25
・Input impedance is high, and not necessary to consider a drive
electric current.
①
⑥
・Vth is low, and drive by low voltage is possible. Vth=1.0～2.0V
②
⑤
・Low on Resistance.
RDS(on)=4.0Ω(TYP)＠I_D=100mA, V_GS=4.0V
RDS(on)=3.0Ω(TYP)＠I_D=100mA, V_GS=10V
・High speed switching.
③
④
・Small package for easy mounting.
Unit：mm
APPLICATION
High speed switching , Analog switching
⑥
⑤
④
Tr.1
Tr.2
①
②
③
TERMINAL
CONNECTOR
①：SOURCE1
②：GATE1
③：DRAIN2
④：SOURCE2
⑤：GATE2
⑥:DRAIN1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
VDSS
VGSS
ID
PD
Tch
Tstg
PARAMETER
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation（Ta=25℃）
Channel temperature
Range of Storage temperature
RATING
60
±20
100
150
＋150
-55～＋150
UNIT
V
V
mA
mW
℃
℃
MARKING
⑥⑤④
._{CＹＫ９４９７４}
①②③
ISAHAYA ELECTRONICS CORPORATION