RT3J55M Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor For high speed switching Silicon P-channel MOSFET

RT3J55M
Composite Transistor
For high speed switching
Silicon P-channel MOSFET
DESCRIPTION
RT3J55M is a composite transistor built with two OUTLINE DRAWING
INJ0011AX chips in SC-88 package.
2.1
FEATURE
1.25
・Input impedance is high, and not necessary to consider a drive
electric current.
①
⑥
・Vth is low, and drive by low voltage is possible.
②
⑤
Vth=-1.0～-2.0V
・Low on Resistance.
③
④
RDS(on)=7.0Ω(TYP)＠I_D=-100mA, V_GS=-4.0V
RDS(on)=4.8Ω(TYP)＠I_D=-100mA, V_GS=-10V
・High speed switching.
・Small package for easy mounting.
Unit：mm
APPLICATION
High speed switching , Analog switching
⑥
⑤
④
Tr.1
Tr.2
①
②
③
TERMINAL
CONNECTOR
①：SOURCE1
②：GATE1
③：DRAIN2
④：SOURCE2
⑤：GATE2
⑥:DRAIN1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃)
SYMBOL
VDSS
VGSS
ID
PD
Tch
Tstg
PARAMETER
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation（Ta=25℃）
Channel temperature
Range of Storage temperature
RATING
－50
±20
-100
150
＋150
-55～＋150
UNIT
V
V
mA
mW
℃
℃
MARKING
⑥⑤④
._{CＹＪ ９５９７５}
①②③
ISAHAYA ELECTRONICS CORPORATION