RT3DSSM Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(SERIES TYPE)

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
〈SMALL-SIGNAL DIODE〉
RT3DSSM
FOR HIGH SPEED SWITCHING APPLICATION
SILICON EPITAXIAL TYPE(SERIES TYPE)
DESCRIPTION
RT3DSSM is a super mini package plastic seal type silicon epitaxial
type composite diode, built with two Series type MC2840.
Quadruple and small pin capacitance (4 pieces), suitable for protect
circuit, bias circuit.
OUTLINEDRAWING
Unit：ｍｍ
FEATURE
●Small pin capacitance
●Quadruple diodes and super mini package for mounting
APPLICATION
For general high speed switching of audio machine,VTR.
Equivalent circuit
MC2840
Di2
Di1
JEITA：SC-88
JEDEC：－
Di1
Di2
MC2840
MAXIMUM RATINGS（Ta=25℃）（Di1,Di2 COMMON）
Symbol
Parameter
Ratings
Unit
V_RM
Peak reverse voltage
35
V
V_R
DC reverse voltage
30
V
I _FSM
Surge current（1μs）
4
A
I _FM
Peak forward current
300
mA
I_O
Average rectification current
100
mA
P_T
Total allowance dissipation
200
mW
T_ｊ
Junction temperature
＋150
℃
Tstg Storage temperature
-55～＋150
℃
MARKING _{⑥ ⑤ ④}
DSS
●
Type Name
①②③
ELECTRICAL CHARACTERISTICS（Ta=25℃）（Di1,Di2 COMMON）
Parameter
Symbol
Test conditions
Forward voltage
Reverse current
Pin capacitance
V_F1
I _F=10mA
V_F2
I _F=50mA
V_F3
I _F=100mA
I_R
V_R=30V
C_ｔ
VR=0V，f=1MHz
Limits
Uniit
Min Typ Max
-
0.75 1.0
-
085 1.2
V
-
0.90 1.4
-
-
0.1 μA
Di1
-
6
-
pF
Di2
-
10
-
ISAHAYA ELECTRONICS CORPORATION