RT3DAAM Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE(ANODE COMMON)

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
〈SMALL-SIGNAL DIODE〉
RT3DAAM
FOR HIGH SPEED SWITCHING APPLICATION
SILICON EPITAXIAL TYPE(ANODE COMMON)
DESCRIPTION
RT3DAAM is a super mini package plastic seal type silicon epitaxial
type composite diode, built with two Anode common MC2836.
Due to the small pin capacitance, short switching time(reverse
recovery time),It is most suitable for high speed switching application
and limitter,clipper application.
OUTLINEDRAWING
Unit：ｍｍ
FEATURE
●Small pin capacitance
●Quick switching time
●High voltage
●Quadruple diodes and super mini package for mounting
APPLICATION
For general high speed switching of audio machine,VTR.
Equivalent circuit
MC2836
JEITA：SC-88
JEDEC：－
MC2836
MAXIMUM RATINGS（Ta=25℃）（All Di COMMON）
Symbol
Parameter
Ratings
Unit
V_RM
Peak reverse voltage
85
V
V_R
DC reverse voltage
80
V
I _FSM
Surge current（1μs）
4
A
I _FM
Peak forward current
300
mA
I_O
Average rectification current
100
mA
P_T
Total allowance dissipation
200
mW
T_ｊ
Junction temperature
＋150
℃
Tstg Storage temperature
-55～＋150
℃
MARKING _{⑥ ⑤ ④}
DAA
●
Type Name
①②③
ELECTRICAL CHARACTERISTICS（Ta=25℃）（All Di COMMON）
Parameter
Symbol
Test conditions
Forward voltage
Reverse current
Pin capacitance
Reverse recovery time
V_F1
I _F=10mA
V_F2
I _F=50mA
V_F3
I _F=100mA
I_R1
V_R=75V
I_R2
V_R=80V
C_ｔ
VR=0V，f=1MHz
trr
(Refer to test circuit)
Limits
Uniit
Min Typ Max
-
0.77 0.9
-
090 1.0
V
-
0.95 1.2
-
-
0.1
μA
-
-
0.5
-
2.8
4.0
pF
-
－
4.0
ns
ISAHAYA ELECTRONICS CORPORATION