RT3C77M Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – Composite Transistor For General Purpose High Current Drive Application Silicon NPN Epitaxial Type

PRELIMINARY ^PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
RT3C77M
Composite Transistor
For General Purpose High Current Drive Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT3C77M is compound transistor built with two
2SC6046 chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
●High collector current
●Low collector to emitter saturation voltage
●Each transistor elements are independent
●Mini package for easy mounting
①
⑥
②
⑤
③
④
Unit：mm
APPLICATION
For switching application, small type motor drive
application
TERMINAL
CONNECTOR
①：EMITTER1
Tr1
②：BASE1
③：COLLECTOR2
Tr2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃) (Tr1, Rr2)
SYMBOL
VCEO
VCBO
VEBO
IC
PT
Tj
Tstg
PARAMETER
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Total dissipation
Junction temperature
Storage temperature
RATING
40
75
6
600
200
＋150
-55～＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
654
.^{C７７}
１23
Type name
ELECTRICAL CHARACTERISTICS (Ta=25℃) (Tr1, Rr2)
Symbol
Parameter
Test conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Collector to Emitter breakdown voltage
Collector to Base breakdown voltage
Emitter to Base breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Base to Emitter saturation voltage
Gain band width product
Collector output capacitance
IC=1mA,IB=0
IC=10μA,IE=0
IE=10μA,IC=0
VCB=60V,IE=0
VEB=3V,IC=0
VCE=10V,IC=150mA
IC=150mA,IB=15mA
IC=150mA,IB=15mA
VCE=20V,IE=-50mA,f=100MHz
VCB=10V,f=1MHZ
Limits
Unit
Min
Typ
Max
40
－
－
V
75
－
－
V
6
－
－
V
－
－
0.1 μA
－
－
0.1 μA
100
－
300
－
－
－
0.3
V
0.6
－
1.2
V
－
250
－
MHZ
－
－
8
pF
ISAHAYA ELECTRONICS CORPORATION