RT3C66M Datasheet, PDF (1/5 Pages) Isahaya Electronics Corporation – Dual Transistor For Differential Amplify Application Silicon Npn Epitaxial Type

PRPREELILMINIAMRY INARY
Notice：This is not a final specification
Some parametric are subject to change.
RT3C66M
Dual Transistor
For Differential Amplify Application
Silicon Npn Epitaxial Type
DESCRIPTION
OUTLINE DRAWING
RT3C66M is a sillicon NPN epitaxial type dual transistor.
It is designed for differential amplify application.
2.1
FEATURE
●High Vceo Vceo=160V
1.25
①
⑥
●Good two elements characteristics
hFE1/hFE2=1.0 typ
｜VBE1-VBE2｜=2mV typ
②
⑤
③
④
Unit：mm
APPLICATION
For differential amplify application.
TERMINAL
CONNECTOR
①：EMITTER1
②：BASE1
Tr1
③：COLLECTOR2
④：EMITTER2
Tr2 ^{⑤：BASE2}
⑥:COLLECTOR1
JEITA：SC-88
JEDEC：－
MAXIMUM RATING (Ta=25℃) (Tr1 , Tr2.)
SYMBOL
PARAMETER
RATING
V_CBO
Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO
Collector to Emitter voltage
I _CM
Peak collector current
I_C
Collector current
P_T
Total allowance dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
180
6
160
200
100
200
＋150
-55～＋150
UNIT
V
V
V
mA
mA
mW
℃
℃
MARKING
654
.^{CJ E}
１23
ISAHAYA ELECTRONICS CORPORATION