RT3AMMAM1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type

PRELIMINARY
RT3AMMAM1
Composite Transistor
For Low Frequency Amplify Application
Silicon Pnp Epitaxial Type
DESCRIPTION
RT3AMMAM1 is compound transistor built with two
ISA1235A chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
Silicon PNP epitaxial type
Each transistor elements are independent.
Mini package for easy mounting.
①
⑥
②
⑤
③
④
Unit：mm
APPLICATION
For low frequency amplify application.
TERMINAL
CONNECTOR
①：EMITTER1
Tr1
②：BASE1
③：COLLECTOR2
Tr2
④：EMITTER2
⑤：BASE2
⑥:COLLECTOR1
JEITA：SC-88
MAXIMUM RATING (Ta=25℃) (Tr1 , Tr2.)
SYMBOL
PARAMETER
RATING
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation（Total,Ta=25℃）
Junction temperature
Storage temperature
-60
-6
-50
-200
150
＋150
-55～＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
654
.^{AA F}
１23
ISAHAYA ELECTRONICS CORPORATION