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RT3A77M Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – Composite Transistor For General Purpose High Current Drive Application Silicon PNP Epitaxial Type | |||
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PRELIMINARY PRELIMINARY
Noticeï¼This is not a final specification
Some parametric are subject to change.
RT3A77M
Composite Transistor
For General Purpose High Current Drive Application
Silicon PNP Epitaxial Type
DESCRIPTION
RT3A77M is compound transistor built with two
2SA2166 chips in SC-88 package.
OUTLINE DRAWING
2.1
1.25
FEATURE
âHigh collector current
âLow collector to emitter saturation voltage
âEach transistor elements are independent
âMini package for easy mounting
â
â¥
â¡
â¤
â¢
â£
Unitï¼mm
APPLICATION
For switching application, small type motor drive
application
TERMINAL
CONNECTOR
â ï¼EMITTER1
Tr1
â¡ï¼BASE1
â¢ï¼COLLECTOR2
Tr2
â£ï¼EMITTER2
â¤ï¼BASE2
â¥:COLLECTOR1
JEITAï¼SC-88
MAXIMUM RATING (Ta=25â) (Tr1, Rr2)
SYMBOL
VCEO
VCBO
VEBO
IC
PT
Tj
Tstg
PARAMETER
Collector to Emitter voltage
Collector to Base voltage
Emitter to Base voltage
Collector current
Total dissipation
Junction temperature
Storage temperature
RATING
-60
-60
-5
-500
200
ï¼150
-55ï½ï¼150
UNIT
V
V
V
mA
mW
â
â
MARKING
654
.Aï¼ï¼
ï¼23
Type name
ELECTRICAL CHARACTERISTICS (Ta=25â) (Tr1, Rr2)
Symbol
Parameter
Test conditions
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cob
Collector to Emitter breakdown voltage
Collector to Base breakdown voltage
Emitter to Base breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
Collector to Emitter saturation voltage
Base to Emitter saturation voltage
Gain band width product
Collector output capacitance
IC=-1mA,IB=0
IC=-10μA,IE=0
IE=-10μA,IC=0
VCB=-50V,IE=0
VEB=-3V,IC=0
VCE=-10V,IC=-150mA
IC=-150mA,IB=-15mA
IC=-150mA,IB=-15mA
VCE=-20V,IE=50mA,f=100MHz
VCB=-10V,f=1MHZ
Limits
Unit
Min
Typ
Max
-60
ï¼
ï¼
V
-60
ï¼
ï¼
V
-5
ï¼
ï¼
V
ï¼
ï¼
-0.1 μA
ï¼
ï¼
-0.1 μA
100
ï¼
300
ï¼
ï¼
ï¼
-0.4
V
ï¼
ï¼
-1.3
V
200
ï¼
ï¼
ï¼
ï¼
MHZ
8
pF
ISAHAYA ELECTRONICS CORPORATION
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