RT2N62M Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – Composite Transistor For Muting Application Silicon NPN Epitaxial Type

DESCRIPTION
RT2N62M is a composite transistor with built-in bias resistor
FEATURE
●Built-in bias resistor ( R1=2..2 KΩ)
●Mini package for easy mounting
APPLICATION
muting circuit、switching circuit
RT2N62M
Composite Transistor
For Muting Application
Silicon NPN Epitaxial Type
OUTLINE DRAWING
2.1
1.25
①
②
③
Unit:mm
⑤
④
⑤④
RTr1
RTr2
R1
R1
①
②
③
TERMINAL CONNECTOR
①：BASE１
②：EMITTER（COMMON）
③：BASE２
④：COLLECTOR２
⑤：COLLECTOR１
JEITA：－
JEDEC：－
MAXIMUM RATINGS （Ta=25℃）（RTr1、RTr2）
Symbol
Parameter
V_CBO
Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO
Collector to Emitter voltage
I_C
Collector current
P_C
Collector dissipation（Total Ta=25℃）
T_j
Junction temperature
T_stg
Storage temperature
Ratings
40
40
20
400
150
＋150
-55～＋150
Unit
MARKING
V
⑤
④
V
V
mA
N６２
mW
℃
℃
①②③
ISAHAYA ELECTRONICS CORPORATION