RT1N137S Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type

RT1N137S
Transistor With Resistor
For Switching Application
Silicon NPN Epitaxial Type
DESCRIPTION
RT1N137S is a one chip transistor
with built-in bias resistor, NPN type is RT1P137S.
OUTLINE DRAWING
4.0
FEATURE
Built-in bias resistor （R1=1kΩ, R2=22kΩ）
High collector current （Ic=1A）
Low VCE(sat) VCE(sat)=0.3V
(@Ic=300mA/IB=3mA)
APPLICATION
Inverted circuit, Switching circuit, Interface circuit,
Driver circuit
0.1
0.45
2.5 2.5
①②③
Unit: mm
R1
B
(IN)
R2
C
(OUT)
E
(GND)
JEITA：－
JEDEC：－
Terminal Connector
①：EMITTER
②：COLLECTOR
③：BASE
MAXIMUM RATING (Ta=25℃)
SYMBOL
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak Collector current
Collector dissipation
Junction temperature
Storage temperature
RATING
40
6
40
1
2
600
150
-55～＋150
UNIT
V
V
V
A
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃)
SYMBOL
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
VI(ON)
VI(OFF)
R1
R2／R1
fT
PARAMETER
C to E breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Input on voltage
Input off voltage
Input resistor
Resistor ratio
Gain band width product
TEST CONDITION
IC=1mA，RBE=∞
VCB=40V，IE =0
VEB=5V，IC =0
VCE=6V，IC =100mA
IC =300mA，IB =3mA
VCE=0.2V，IC =300mA
VCE=5V，IC =100μA
－
－
VCE=6V，IE =-10mA
MARKING
N13
7 □□
type name
Lot №
MIN
LIMIT
TYP
MAX
UNIT
40
－
－
V
－
－
-0.1 μA
168
217
310 μA
100
－
－
－
－
0.1
0.3
V
－
2.3
4.0
V
0.4
0.5
－
V
0.7
1.0
1.3
kΩ
20
22
24
－
－
150
－ MHz
ISAHAYA ELECTRONICS CORPORATION