RT1C3904-T12 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor

PRELIMINARY
Notice:this is not a final specification.
Some parametric limits are subject to
change.
RT1C3904-T12
Transistor
For General purpose Application
Silicon NPN Epitaxial Type
RT1C3904 is a one chip transistor.
FEATURE
Mini package for easy mounting.
APPLICATION
General purpose transistor
OUTLINE DRAWING
2.5
0.5 ^{1.5 0.5}
UNIT:mm
1
3
2
MAXIMUM RATINGS (Ta=25 )
SYMBOL
PARAMETER
VCEO Collector to Emitter voltage
VCBO
VEBO
Collector to Base voltage
Emitter to Base voltage
IC
Collector current
RATINGS
40
60
6.0
200
UNIT
V
V
V
mA
Terminal Connector
1 : Base
2 : Emitter
3 : Collector
EIAJ : SC-59
JEDEC : TO-236 resemblance
THERMAL CHARACTERISTICS
SYMBOL
PD
R JA
PD
R JA
Tj
Tstg
Characteristics
Total Device Dissipation Glass-Epoxi
Board(1) Ta=25
Derate Adove 25
Thermal Resistance Junction to Ambient
Total Device Dissipation
Alumina Substrate(2)Ta=25
Derate Adove 25
Thermal Resistance Junction to Ambient
Junction temperature
Storage temperature
RATINGS
225
UNIT
mW
1.8
mW/
556
/mW
300
mW
2.4
mW/
417
/mW
+150
-55 to +150
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise noted)
Equivalent Circuit
OLLECTOR
ASE
EMITTER
SYMBOL
PARAMETER
TESTCONDITIONS
V(BR)CEO
V(BR)CBO
V(BR)EBO
I BL
I CEX
C to E break down voltage⁽³⁾
C to B break down voltage
E to B break down voltage
Base cut off current
Collector cut off current
I C=1.0mA, I B=0
I C=10 A, I E=0
I C=10 A, I C=0
VCE=30V, V EB=3.0V
VCE=30V, V EB=3.0V
1.Glass-Epoxi=1.0 0.75 3.2in
2.Alumina=0.4 0.3 3.2 in
3.Pulse test
ISAHAYA ELECTRONICS
LIMITS
MIN
TYP
40
60
6
CORPORATION
MAX
50
50
UNIT
V
V
V
nA
nA