ISC3247AS1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR RELAY DRIVE, POWOR SUPPLY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION
ISC3247AS1 is a silicon NPN epitaxial type transistor.
Designed with high voltage, high collector current,
dissipation and high hFE.
〈SMALL-SIGNAL TRANSISTOR〉
ISC3247AS1
FOR RELAY DRIVE, POWOR SUPPLY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.0
Unit：ｍｍ
FEATURE
●High hFE. hFE=600 to 1800
●High voltage. V_CEo=50V
●Low collector to emitter saturation voltage.
V_CE(sat)=0.15V (@I_C=500mA, I_B=10mA)
●High collector dissipation. P_C=600mW
0.1
0.45
2.5 2.5
①②③
APPLICATION
Relay drive or power supply for audio machine, VCR, and
other electronic machine.
MAXIMUM RATINGS（Ta=25℃）
Symbol
VCBO
VEBO
VC. EO
I_C
I_CM
P_c
T_j
T_stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
50
V
6
V
50
V
1
A
2
A
600
mW
+150
℃
-55～+150
℃
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
I_C= 10μA , I_E =0mA
I_E= 10μA , I_C =0mA
I_C= 1mA , RBE= ∞
V_CB= 40V , I_E= 0mA
V_EB=2V , I_C= 0mA
V_CE = 6V , I_C= 0.1A
I_C=500mA , I_B= 10mA
V_CE= 10V , I_E= -10mA
V_CB= 10V , I_E= 0mA,f=1MHz
Limits
Unit
Min Typ Max
50
-
-
V
6
-
-
V
50
-
-
V
-
-
0.1 μA
-
-
0.1 μA
600
-
1800 -
-
0.15 0.5
V
-
130
-
MHz
-
12
-
pF
※） It shows hFE classification in right table.
Item
hFE item
H
J
600～1200 900～1800
ISAHAYA ELECTRONICS CORPORATION