ISC3244AS1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISC3244AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC3244AS1 is a silicon NPN epitaxial type transistor
designed with high collector dissipation, high voltage.
Complementary with ＩSA1284AS1.
OUTLINE DRAWING
4.0
Unit：ｍｍ
FEATURE
●High voltage. V_CEo=100V
●High peak collector current. I_CM=800mA
●High gain band width product. fT=130MHz (typ)
●High collector dissipation. P_C=600mW
0.1
0.45
2.5 2.5
APPLICATION
Drive for 20 to 40W amplifier, relay drive, power supply
application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
.
VCBO
VEBO
VCEO
I_C
I_CM
P_c
T_j
T_stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
100
V
5
V
100
V
500
mA
800
mA
600
mW
+150
℃
-55～+150
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
I_C= 10μA , I_E =0mA
I_E= 10μA , I_C =0mA
I_C= 1mA , RBE= ∞
V _CB= 50V , I _E= 0mA
V _EB=2V , I _C= 0mA
V _CE = 10V , I_C= 10mA
I _C=150mA , I _B= 15mA
V _CE=10V , I _E= -10mA
V_CB= 10V , I_E= 0mA,f=1MHz
①②③
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
Limits
Unit
Min Typ Max
100
-
-
V
5
-
-
V
100
-
-
V
-
-
0.5 μA
-
-
0.5 μA
55
-
300
-
-
0.15 0.5
V
-
130
-
MHz
-
6.5
-
pF
※） It shows hFE classification in right table.
Item
hFE item
C
55～110
D
90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION