ISC3242AS1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISC3242AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
ISC3242AS1 is a silicon NPN epitaxial type transistor
designed for small type motor drive, solenoid drive and power
supply application.
Complementary with 2SA1998.
FEATURE
●High collector current. I_C=2A
●Low V_CE(sat).
V_CE(sat)=0.17V typ (@I_C=1A)
●High hFE hFE=150 to 800
●High collector dissipation. P_C=600mW
APPLICATION
Small type motor drive, power supply for VCR, deck, player.
MAXIMUM RATINGS（Ta=25℃）
Symbol
.
VCBO
VEBO
VCEO
I_C
I_CM
P_c
T_j
T_stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
20
V
6
V
20(16)※1
V
2
A
3
A
600
mW
+150
℃
-55～+150
℃
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
①②③
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
Unit：ｍｍ
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
C to B break down voltage
I_C= 10μA , I_E =0mA
V(BR)EBO
E to B break down voltage
I_E= 10μA , I_C =0mA
V(BR)CEO
C to E break down voltage
I_C=2mA , RBE= ∞
ICBO
Collector cut off current
V _CB= 16V , I _E= 0mA
IEBO
Emitter cut off current
V _EB= 4V , I _C= 0mA
hFE※2
DC forward current gain
V _CE = 4V , I_C=100mA
VCE(sat)
C to E Saturation Voltage
I _C= 1A , I _B=50mA
fT
Gain band width product
V _CE=2V , I _E= -10mA
Cob
Collector output capacitance V _CB= 10V , I _E= 0mA,f=1MHz
※1：( ) shows value of item G .
※2：It shows hFE classification in right table.
Item
hFE item
Limits
Unit
Min
Typ Max
20
-
-
V
6
-
-
V
20(16) ※1 -
-
V
-
-
0.2 μA
-
-
0.2 μA
150
-
800
-
-
0.17 0.3
V
-
80
-
MHz
-
28
-
pF
E
F
150～300 250～500
G
400～800
ISAHAYA ELECTRONICS CORPORATION