ISB1035AS1 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISB1035AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
ISB1035AS1 is a resin sealed silicon PNP epitaxial type
4.0
transistor. It is designed for low frequency power amplify
application. Complementary with ISD1447AS1.
FEATURE
●High collector current. I_CM= 1.5A
●High gain band width product. fT= 100MHz typ
●High collecot dissipation. Pc= 600mW
●Excellent linearity of DC forward current gain.
0.1
0.45
2.5 2.5
Unit：ｍｍ
APPLICATION
Radio, tape recorder, small type stereo, etc.
Low frequency power amplify circuit with 2 to 3.5W output.
①②③
MAXIMUM RATINGS（Ta=25℃）
.
Symbol
Parameter
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
I_C
Collector current
I_CM
Peak collector current
P_c
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
Ratings
Unit
-30
V
-4
V
-25
V
-1
A
-1.5
A
600
mW
+150
℃
-55～+150
℃
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Test conditions
I_C= -10μA , I_E =0mA
I_E= -10μA , I_C =0mA
I_C= -100μA , RBE= ∞
V _CB= -25V , I _E= 0mA
V _EB= -2V , I _C= 0mA
V _CE = -1V , I_C= -500mA
I _C= -500mA , I _B= -25mA
V _CE= -6V , I _E= 10mA
Limits
Unit
Min Typ Max
-30
-
-
V
-4
-
-
V
-25
-
-
V
-
-
-1 μA
-
-
-1 μA
55
-
300
-
-
-
-0.5
V
-
100
-
MHz
※） It shows hFE classification in right table.
Item
hFE item
C
55～110
D
90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION