ISA2191AT2 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – Transistor

〈Transistor〉
ISA2191AT2
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2191AT2 is a super mini package resin sealed silicon PNP epitaxial
transistor,It is designed for low frequency application.
Since it is a super-thin flat lead type package,a high-density
mounting are possible.
OUTLINE DRAWING
1.21±0.1
0.79±0.1
Unit：ｍｍ
FEATURE
●Super-thin flat lead type package. t=0. 5mm
●Excellent linearly of DC forward current gain.
●Low collector to emitter saturation voltage
VCE(sat)=-0.3V max (@Ic=-100mA/IB=-10mA)
①
②
③
APPLICATION
For hybrid IC,small type machine low frequency voltage amplify
application
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
Ratings Unit
VCBO
VEBO
VCEO
IC
PC
Tj
Tstg
Collector to Base voltage
-60
V
Emitter to Base voltage
-6
V
Collector to Emitter voltage
-50
V
Collector current
Collector dissipation
-150
mA
125（※） mW
Junction temperature
125
℃
Storage temperature
-55～125 ℃
※package mounted on 9×19×1mm glass-epoxy substrate.
JEITA：─
ISAHAYA：T-USM
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
MARKING
Abbreviation for Kind
hFE Item
J
７ ＦI
H
A BC DE F
G
電気的特性（Ta=25℃）
Parameter
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
A～F running No.
G～J Month of manufacture
Symbol
Test conditions
V(BR)CEO
ICBO
IEBO
hFE*
hFE
VCE(sat)
fT
Cob
I_C=-100μA, R _BE=∞
V _CB=-60V, I _E=0mA
V _EB=-6V, I _C=0mA
V _CE=-6V, I _C=-1mA
V _CE=-6V, I _C=-100μA
I_C=-100mA, I _B=-10mA
V _CE=-6V, I _E=10mA
V _CB=-6V, I _E=0A, f=1MHz
Limits
Unit
Min Min Min
-50
-
-
V
-
-
-0.1 μA
-
-
-0.1 μA
150
-
500
-
90
-
-
-
-
-
-0.3
V
-
200
-
MHz
-
3.0
-
pF
※ It shows hFE classification in below table
Item
E
F
hFE
150～300 250～500
ISAHAYA ELECTRONICS CORPORATION