ISA2166AU1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
※This datasheet is possibility of change.
Because this device is developing now.
ISA2166AU1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA2166AU1 is a silicon PNP epitaxial type transistor
Designed with high collector current, low V_CE(sat).
FEATURE
●High collector current
I_{C（MAX）}=-500mA
●Low collector to emitter saturation voltage
V_{CE（sat）}<-0.4V_max(I_C=-150mA, I_B=-15mA）
OUTLINE DRAWING
1.5
0.35 0.8
Unit：mm
0.35
①
②
③
APPLICATION
For switching application, small type motor drive application.
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
JEITA：SC-75A
JEDEC： －
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Ratings
Unit
V_CEO Collector to Emitter voltage
-60
V
V_CBO Collector to Base voltage
-60
V
V_EBO Emitter to Base voltage
-5
V
I_C
Collector current
-500
mA
P_C Collector dissipation
150
mW
T_j Junction temperature
150
℃
T_stg Storage temperature
-55～150
℃
MARKING
Type Name
A・W
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
V_{（BR）CEO}
V_{（BR）CBO}
V_{（BR）EBO}
I_CBO
I_EBO
h_FE
V_{CE（sat）}
V_{BE（sat）}
f_T
C_ob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
B to E saturation voltage
Gain band width product
Collector output capacitance
Test condition
I_C=-1mA, I_B=0
I_C=-10uA, I_E=0
I_E=-10uA, I_C=0
V_CB=-50V, I_E=0
V_EB=-3V, I_C=0
I_C=-150mA, V_CE=-10V
I_C=-150mA, I_B=-15mA
I_C=-150mA, I_B=-15mA
I_E=50mA, V_CE=-20V,f=100MHz
V_CB=-10V, f=1MHz
Limits
Unit
Min Typ Max
-60
－
－
V
-60
－
－
V
-5
－
－
V
－
－ -0.1 uA
－
－ -0.1 uA
100
－
300
－
－
－ -0.4 V
－
－ -1.3 V
200
－
－ MHz
－
－
8
pF
ISAHAYA ELECTRONICS CORPORATION