ISA1995AS1 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(FRAME TYPE)

〈SMALL-SIGNAL TRANSISTOR〉
ISA1995AS1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(FRAME TYPE)
DESCRIPTION
ISA1995AS1 is mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=max-0.3V（@Ic=-30mA、IB=-1.5mA）
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
OUTLINE DRAWING
4.0
Unit：ｍｍ
0.1
0.45
2.5 2.5
①②③
APPLICATION
small type machine low frequency voltage Amplify application.
JEITA：
JEDEC：
MAXIMUM RATINGS（Ta=25℃）
.
Symbol
Parameter
V_CBO Collector to Base voltage
V_CEO Collector to Emitter voltage
V_EBO Emitter to Base voltage
I_O
Collector current
P_c
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
Ratings
Unit
-50
V
-6
V
-50
V
-100
mA
450
mW
+150
℃
-55～+150
℃
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
MARKING
A 95
□□ R
hFE アイテム
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
Limits
Unit
Min Typ Max
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
I_C= -100μA , RBE= ∞
V _CB= -50V , I _E= 0mA
V _EB= -4V , I _C= 0mA
V _CE = -6V , I_C= -1mA
V _CE = -6V , I_C= -0.1mA
I _C= -30mA , I _B= -1.5mA
V _CE= -6V , I _E= 10mA
V _CB= -6V , I _E= 0mA,f=1MHz
-50
-
-
V
-
-
-0.5 μA
-
-
-0.5 μA
120
-
560
-
70
-
-
-
-
-
-0.3
V
-
200
-
MHz
-
2.5
-
pF
※） It shows hFE classification in below table.
Item
hFE item
Q
120～270
R
180～390
S
270～560
ISAHAYA ELECTRONICS CORPORATION