ISA1989AU1 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – SMALL-SIGNAL TRANSISTOR

DESCRIPTION
ISA1989AU1 is a ultra super mini package resin sealed
silicon PNP epitaxial transistor,
It is designed for low frequency voltage application.
.
FEATURE
●Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max（@ I _C=-30mA ,I_B=-1.5mA）
●Excellent linearity of DC forward gain.
●Super mini package for easy mounting
〈SMALL-SIGNAL TRANSISTOR〉
ISA1989AU1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE)
OUTLINE DRAWING
0.4
1.6
0.8 0.4
Unit：ｍｍ
①
②
③
APPLICATION
For Hybrid IC,small type machine low frequency voltage
Amplify application.
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
.
V_CBO Collector to Base voltage
V_CEO Collector to Emitter voltage
V_EBO Emitter to Base voltage
I_O
Collector current
P_c
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
Ratings
Unit
-50
V
-50
V
-6
V
-100
mA
150
mW
＋150
℃
-55～＋150
℃
JEITA：SC-75A
TERMINAL CONNECTER
①：BASE
②：EMITTER
③：COLLECTOR
MARKING
. _TR
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Test conditions
Limits
Unit
Min Typ Max
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
V(BR)CEO
ICBO
IEBO
hFE
hFE
VCE(sat)
fT
Cob
I _C=-100μA ,R _BE=∞
V _CB=-50V, I _E=0mA
V _EB=-4V, I _C=0mA
V _CE=-6V, I _C=-1mA
V _CE=-6V, I _C=-0.1mA
I _C=-30mA ,I_B=-1.5mA
V _CE=-6V, I _E=10mA
V _CE=-6V, I _E=0,f=1MHz
-50
-
-
V
-
-
-0.5 μA
-
-
-0.5 μA
※
120
- 560
70
-
-
-
-
-0.3
V
-
200
-
MHz
-
2.5
-
pF
※） It shows hFE classification in below table.
Item
hFE item
Q
120～270
R
180～390
S
270～560
ISAHAYA ELECTRONICS CORPORATION