ISA1602AM1_13 Datasheet, PDF (1/5 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1235AC1 ISA1602AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
OUTLINE DRAWING
UNIT：mm
ISA1235AC1
ISA1602AM1
2.8
0.65 1.5 0.65
2.1
0.425 1.25 0.425
FEATURE
・Excellent linearity of DC forward current gain.
①
②
③
①
②
③
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
APPLICATION
For small type machine low frequency voltage
amplify application.
0～0.1
JEITA：SC-59
JEDEC：TO-236 resemblance
MAXIMUM RATINGS（Ta=25℃）
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
Symbol
Ｖ_{ＣＢＯ}
Ｖ_{ＥＢＯ}
Ｖ_{ＣＥＯ}
Ｉ_Ｃ
ï¼°_ï¼£
Ｔｊ
Ｔｓｔｇ
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
ISA1235AC1 ISA1602AM1
-60
-6
-50
-200
200
+150
-55～+150
UNIT
V
V
V
mA
mW
℃
℃
0～0.1
JEITA：SC-70
JEDEC：－
TERMINAL CONNECTOR
①：BASE
②：EMITTER
③：COLLECTOR
MARKING
. _MF
hFE ITEM
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Symbol
Parameter
Ｖ_{（ＢＲ）ＣＥＯ}
Ｉ _{ＣＢＯ}
Ｉ _{EＢＯ}
ｈ_ＦＥ*
ｈ_ＦＥ
Ｖ_{ＣＥ（ｓａｔ）}
ｆ_Ｔ
Cob
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain bandwidth product
Collector output capacitance
NF Noise Figure
Test conditions
I _C=-100μA，R_BE=∞
V_CB=-60V，I _E =0
V_EB=-6V，I _C =0
V_CE=-6V，I _C =-1mA
V_CE=-6V，I _C =-0.1mA
I _C =-100mA，I _B =-10mA
V_CE=-6V，I _E =10mA
V_CB=-6V，I _E =0,f=1MHz
V_CE=-6V，I _E =0.3mA，
f=100Hz，RG=10kΩ
Limits
UNIT
Min Ave Max
-50
－
－
V
－
－ -0.1 μA
－
－ -0.1 μA
150
－
500
－
90
－
－
－
－
－
-0.3
V
－
200
－ MHz
－
4.0
－
pF
－
－
20
dB
*：It shows hFE classification in below table.
E
F
ｈFE 150～300 250～500
ISAHAYA ELECTRONICS CORPORATION