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ISA1530AC1 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – SMALL-SIGNAL TRANSISTOR | |||
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ãSMALL-SIGNAL TRANSISTORã
ISA1530AC1 ISA1603AM1
.
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1530AC1 ISA1603AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
OUTLINE DRAWING
UNITï¼mm
ISA1530AC1
ISA1603AM1
2.5
0.5 1.5 0.5
2.1
0.425 1.25 0.425
FEATURE
ã»Excellent linearity of DC forward current gain.
â
â¡
â¢
â
â¡
â¢
ã»Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
APPLICATION
For small type machine low frequency voltage
amplify application.
0ï½0.1
MAXIMUM RATINGSï¼Ta=25âï¼
JEITAï¼SC-59
JEDECï¼TO-236 resemblance
TERMINAL CONNECTOR
â ï¼BASE
â¡ï¼EMITTER
â¢ï¼COLLECTOR
Symbol
VCBO
VEBO
VCEO
IC
ï¼°ï¼£
ï¼´ï½
ï¼´ï½ï½ï½
Parameter
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
ISA1530AC1 ISA1603AM1
-60
-6
-50
-150
200
+150
-55ï½+150
UNIT
V
V
V
mA
mW
â
â
0ï½0.1
JEITAï¼SC-70
JEDECï¼ï¼
TERMINAL CONNECTOR
â ï¼BASE
â¡ï¼EMITTER
â¢ï¼COLLECTOR
MARKING
. TR
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Symbol
Parameter
Vï¼ï¼¢ï¼²ï¼ï¼£ï¼¥ï¼¯
I CBO
I EBO
ï½ï¼¦ï¼¥*
ï½ï¼¦ï¼¥
VCEï¼ï½ï½ï½ï¼
ï½ï¼´
Cob
NF
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Noise figure
Test conditions
I C=-100μAï¼RBE=â
VCB=-60Vï¼I E =0
VEB=-4Vï¼I C =0
VCE=-6Vï¼I C =-1mA
VCE=-6Vï¼I C =-0.1mA
I C =-100mAï¼I B =-10mA
VCE=-6Vï¼I E =10mA
VCB=-6Vï¼I E =0,f=1MHz
VCE=-6Vï¼I E =0.3mA
f=100Hzï¼RG=10kΩ
Limits
UNIT
Min Ave Max
-50
V
-0.1 μA
-0.1 μA
120
560
ï¼
70
ï¼
-0.3
V
200
MHz
4.0
pF
20
dB
*ï¼It shows hFE classification in below table.
Q
R
S
ï½FE 120ï½270 180ï½390 270ï½560
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