ISA1399AS1 Datasheet, PDF (1/3 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISA1399AS1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1399AS1 is a silicon PNP epitaxial type transistor
designed with High collector current, high voltage.
Complementary with ISA3581AS1.
FEATURE
●High collector current. I_CM=600mA
●High gain band width product. fT=150MHz typ
●High V_CEO. V_CEO=-50V
●Excellent linearity of DC forward current gain.
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
Unit：ｍｍ
APPLICATION
For switching, small type motor drive application.
①②③
.
MAXIMUM RATINGS（Ta=25℃）
Symbol
VCBO
VEBO
VCEO
I_C
I_CM
P_c
T_j
T_stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
-55
V
-4
V
-50
V
-400
mA
-600
mA
600
mW
＋150
℃
-55～＋150
℃
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Test conditions
I_C= -10μA , I_E = 0
I_E= -10μA , I_C = 0
I_C= -100μA , RBE= ∞
V _CB= -25V , I _E= 0mA
V _EB = -2V , I_C= 0mA
V _CE = -4V , I_C= -100mA
I _C= -200mA , I _B= -10mA
V _CE= -6V , I _E= 10mA
Limits
Unit
Min Typ Max
-55
-
-
V
-4
-
-
V
-50
-
-
V
-
-
-1 μA
-
-
-1 μA
90
-
500
-
-
-0.17 -0.5
V
-
150
-
MHz
※） It shows hFE classification in right table.
Item
hFE item
D
90～180
E
150～300
F
250～500
ISAHAYA ELECTRONICS CORPORATION