ISA1287AS1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR RELAY DRIVE, POWOR SUPPLY APPLICATION

〈SMALL-SIGNAL TRANSISTOR〉
ISA1287AS1
FOR RELAY DRIVE, POWOR SUPPLY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1287AS1 is a silicon PNP epitaxial type transistor.
Designed with high voltage, high collector current, dissipation
and high hFE.
Complementary with ISC3247AS1.
FEATURE
●High hFE hFE=400 to 800
●High voltage. V_CEO=-50V
●Low collector to emitter saturation voltage.
V_CE(sat)=-0.2V (@I_C=-500mA, I_B=-10mA)
●High collector dissipation. P_C=600mW
APPLICATION
Relay drive or power supply of audio machine, VCR, and
other electronic machine.
MAXIMUM RATINGS（Ta=25℃）
.
Symbol
Parameter
VCBO Collector to Base voltage
VEBO Emitter to Base voltage
VCEO Collector to Emitter voltage
I_C
Collector current
I_CM
Peak collector current
P_c
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
Ratings
Unit
-50
V
-6
V
-50
V
-1
A
-2
A
600
mW
＋150
℃
-55～＋150
℃
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
①②③
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
Unit：ｍｍ
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
IC=-10μA, IE=0mA
IE=-10μA, IC=0mA
IC=-1mA, RBE=∞
VCB=-40V, IE=0mA
VEB=-2V, IC=0mA
VCE=-6V, IC=-100mA
IC=-500mA, IB=-10mA
VCE=-10V, IE=10mA
VCB=-10V, IE=0mA, f=1MHz
Limits
Unit
Min Typ Max
-50
―
―
V
-6
―
―
V
-50
―
―
V
―
― -0.1 μA
―
― -0.1 μA
400
―
800
―
―
-0.2 -0.5
V
―
90
― MHz
―
30
―
pF
※） It shows hFE classification in right table.
Item
hFE
G
400～800
ISAHAYA ELECTRONICS CORPORATION