ISA1284AS1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

〈SMALL-SIGNAL TRANSISTOR〉
ISA1284AS1
FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
ISA1284AS1 is a silicon PNP epitaxial type transistor
designed for high voltage application.
Complementary with ISC3244AS1.
FEATURE
●High voltage V_CEO=-100V
●High peak collector current. I_CM=-800mA
●High gain band width product. fT=130MHz (typ)
●High collector dissipation. P_C=600mW
OUTLINE DRAWING
4.0
0.1
0.45
2.5 2.5
Unit：ｍｍ
APPLICATION
For 20～40W amp complementary drive, relay drive, power supply
application.
①②③
MAXI^.MUM RATINGS（Ta=25℃）
Symbol
VCBO
VEBO
VCEO
I_C
I_CM
P_c
T_j
T_stg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
-100
V
-5
V
-100
V
-500
mA
-800
mA
600
mW
+150
℃
-55～+150
℃
JEITA：
JEDEC：
TERMINAL CONNECTER
①：EMITTER
②：COLLECTOR
③：BASE
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Parameter
Test conditions
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE※
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain band width product
Collector output capacitance
I_C= -10μA , I_E =0mA
I_E= -10μA , I_C =0mA
I_C= -1mA , RBE= ∞
V _CB= -50V , I _E= 0mA
V _EB= -2V , I _C= 0mA
V _CE = -10V , I_C= -10mA
I _C= -150mA , I _B= -15mA
V _CE= -10V , I _E= 10mA
V _CB= -10V , I _E= 0mA,f=1MHz
Limits
Unit
Min Typ Max
-100
-
-
V
-5
-
-
V
-100
-
-
V
-
-
-0.5 μA
-
-
-0.5 μA
55
-
300
-
-
-0.15 -0.5
V
-
130
-
MHz
-
11
-
pF
※） It shows hFE classification in right table.
Item
hFE item
C
50～110
D
90～180
E
150～300
ISAHAYA ELECTRONICS CORPORATION