|
INJ0212AP1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – High Speed Switching Silicon P-channel MOSFET | |||
|
INJ0212AP1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0210AP1 is a Silicon P-channel MOSFET.
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
OUTLINE DRAWING
4.4
1.6
UNITï¼mm
1.5
FEATURE
SDG
MARKING
ã»Input impedance is high, and not necessary to
consider a drive electric current.
ã»High drain current ID=-2.5A
ã»Vth is low, and drive by low voltage is possible. Vth=1.0ï½2.5V
0.5 0.4
0.4
1.5
3.0
ã»Low on Resistance. RDS(on)=95mΩ(TYP).
ã»High speed switching.
APPLICATION
TERMINAL CONNECTOR
Sï¼SOURCE
Dï¼DRAIN
Gï¼GATE
JEITAï¼SC-62
JEDECï¼SOT-89
Switching
MAXIMUM RATING ï¼Ta=25âï¼
Symbol
Parameter
Rating
UNIT
VDSS Drain-Source Voltage
-30
V
VGSS Gate-Source Voltage
±20
V
ID(DC) Drain Current (DC)
-2.5
A
IDP
Drain Current(Pulse) â»1
-5
A
PD
Total Power Dissipation
750(â»2)
mW
Tch
Channel Temperature
150
â
Tstg
Storage Temperature
-55ï½+150
â
â»1ï¼PWâ¦10µs, Duty cycleâ¦1%
â»2ï¼package mounted on 9mmÃ19mmÃ1mm glass-epoxy substrate
EQUIVALENT
D
G
S
MARKING
JJ
Type Name
Lot Noï¼
ELECTRICAL CHARACTERISTICS ï¼Ta=25âï¼
Parameter
Symbol
Test Condition
Drain-Source Breakdown Voltage
Gate-Source Leak Current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
V(BR)DSS
IGSS
IDSS
Vth
|Yfs|
RDS(ON)
Ciss
Coss
ton
toff
ID=-100µAï¼VGS=0V
VGS=±20Vï¼ID=0A
VDS=-30Vï¼VGS=0V
ID=-250µAï¼VDS=VGS
VDS=-10Vï¼ID=-1.2A
ID=-0.5Aï¼VGS=-4.5V
ID=-0.5Aï¼VGS=-10V
VDS=-10Vï¼VGS=0Vï¼f=1MHz
VDD=-10Vï¼ID=-2.5Aï¼VGS=-0ï½-5V
Limit
Unit
MIN
TYP
MAX
-30
-
-
V
-
-
±10
µA
-
-
-1
µA
-1
-
-2.5
V
-
3.0
-
S
-
120
-
mâ¦
-
95
-
-
500
-
pF
-
100
-
-
35
-
ns
-
50
-
ISAHAYA ELECTRONICS CORPORATION
|
▷ |