INJ0203AC1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – High Speed Switching Silicon P-channel MOSFET

INJ0203AC1
High Speed Switching
Silicon P-channel MOSFET
DESCRIPTION
INJ0203AC1 is a Silicon P-channel MOSFET.
OUTLINE DRAWING
This product is most suitable for use such as portable
machinery, because of low voltage drive and low on resistance.
2.8
0.65 1.5 0.65
FEATURE
・Input impedance is high, and not necessary to
consider a drive electric current.
・Drive voltage -2.5V
・Low on Resistance. RDS(on)=100mΩ(TYP).
・High speed switching.
・Small package for easy mounting.
①
②
③
Unit：ｍｍ
APPLICATION
Switching
MAXIMUM RATINGS（Ta=25℃）
Symbol
Parameter
Rating Unit
VDSS Drain-Source Voltage
-20
V
VGSS Gate-Source Voltage
-10
V
ID Drain Current(DC)
-2
A
IDP Drain current(Pulse) ※1
-4
A
PD Total Power Dissipation
200
mW
Tch Channel Temperature
+150
℃
Tstg Storage Temperature
-55～+150 ℃
※1：Pw≦10μs, Duty cycle≦1%
JEITA：SC-59
JEDEC：Similar to TO-236
TERMINAL CONNECTER
①：GATE
②：SOURCE
③：DRAIN
EQUIVALENT CIRCUIT
D
G
MARKING
J・８
S
ELECTRICAL CHARACTERISTICS（Ta=25℃）
Parameter
Symbol
Drain-Source Breakdown Voltage
Gate-Source Leak current
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Forward Transfer Admittance
Static Drain-Source On-State Resistance
Input Capacitance
Output Capacitance
Switching Time
V(BR)DSS
IGSS
IDSS
Vth
| Yfs |
RDS(ON)
Ciss
Coss
ton
toff
Test Condition
I_D=-100μA, V_GS=0V
V_GS=±10V, I_DS=0A
V_DS=-20V ,V_GS=0V
I_D=-250μA, V_DS=V _GS
V_DS=-10V, I_D=-1A
I_D=-1A, V_GS=-4.5V
V_DS=-10V, V_GS=0V, f=1MHz
V_DD=-15V, I_D=-1A
V_GS=0～-10V
Limit
Unit
MIN TYP MAX
-20 -
-
V
-
- ±10 μA
-
- -10 μA
-0.4 - -1.2 V
- 3.0 -
S
- 100 - mΩ
- 340 -
pF
-
90
-
pF
-
30
-
ns
- 130 -
ns
ISAHAYA ELECTRONICS CORPORATION