INC6008AP1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INC6008AP1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage V_CEO = 140V
・High collector current Ic=1A
・Low voltage VCE(sat) = 0.7V(MAX)
APPLICATION
Relay drive, Power supply
<SMALL-SIGNAL TRANSISTOR>
INC6008AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：ｍｍ
1.5
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EM_ＥI_:T_エTE_ミR_ッタ
C：C^ＣO^:LL^コE^レCT^クO^タR
Ｂ: ベース
B：BASE
JEITA:SC-62
EJ_{JEIAEDJDEEC: C}S:_:C_S-_O6_T2_-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO
Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO
Collector to Emitter voltage
I_C
Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
RATING
160
5
140
1
500
＋150
-55～＋150
UNIT
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
I_EBO
ｈＦＥ1
ｈＦＥ2
VCE(sat)
VBE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
I _C=100μA，I _E=0mA
I _E=100μA，I _C=0mA
I _C=10mA，R_BE=∞
V_CB=140V，I _E =0mA
V_EB=4V，I _C=0mA
V_CE=10V，I _C=150mA
V_CE=10V，I _C=1A
I _C=150mA，I _B=15mA
I _C=150mA，I _B=15mA
V_CE=10V，I _E=-50mA
V_CB=10V，I _E=0mA，f=1MHz
MARKING
Type Name
BH
LOT №
W
h_FE ITEM
LIMITS
MIN TYP MAX
160
-
-
5
-
-
140
-
-
-
-
100
-
-
100
100
-
300
-
10
-
-
-
0.7
-
-
1.1
100
-
-
-
-
15
UNIT
V
V
V
nA
nA
-
-
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION