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INC6007AP1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
PRELIMINARY
Notice:This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INC6007AP1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage VCEO = 400V
・High collector current Ic=500mA
APPLICATION
DC-DC converter, High voltage switching
<SMALL-SIGNAL TRANSISTOR>
INC6007AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
UNIT:mm
1.5
E CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E:EMEI:TエTEミRッタ
C:CCO:LLコEレCTクOタR
B: ベース
B:BASE
JEITA:SC-62
EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
PC
Collector dissipation(Ta=25℃)
Tj
Junction temperature
Tstg
Storage temperature
RATING
400
5
400
500
0.5
+150
-55~+150
UNIT
V
V
V
mA
W
℃
℃
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
ton
toff
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
Turn on time
Turn off time
I C=100μA,I E=0mA
I E=100μA,I C=0mA
I C=10mA,RBE=∞
VCB=320V,I E =0mA
VEB=4V,I C=0mA
VCE=5V,I C=1mA
VCE=5V,I C=100mA
I C=100mA,I B=10mA
I C=100mA,I B=10mA
VCE=20V,I E=-20mA
VCB=20V,I E=0mA,f=1MHz
VCC=100V,I C=100mA
I B1=10mA,-I B2=20mA
MARKING
Type Name
BK
W
LOT №
hFE ITEM
LIMITS
MIN TYP MAX
400
-
-
5
-
-
400
-
-
-
-
100
-
-
100
50
-
-
50
-
150
-
-
0.5
-
-
0.9
50
-
-
-
-
10
-
130
-
-
3300
-
UNIT
V
V
V
nA
nA
-
-
V
V
MHz
pF
ns
ns
ISAHAYA ELECTRONICS CORPORATION