INC6006AC1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INC6006AC1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage V_CEO = 160V
・Low voltage VCE(sat) = 0.2V(MAX)
・Complementary ： INA6006AC1
APPLICATION
High voltage switching.
INC6006AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNIT：mm
①
②
③
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO Collector to Emitter voltage
I _CM
Peak collector current
I_C
Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
*Mounted on glass epoxy board(46mm×19mm×1mm)
RATING
180
6
160
200
100
200
500（*）
＋150
-55～＋150
UNIT
V
V
V
mA
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
I_EBO
ｈＦＥ1
ｈＦＥ2
ｈＦＥ3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
fT
Cob
Cib
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage1
C to E saturation voltage2
B to E saturation voltage1
B to E saturation voltage2
Gain bandwidth product
Collector output capacitance
Collector input capacitance
I _C=100μA，I _E=0A
I _E=10μA，I _C=0A
I _C=1mA，R_BE=∞
V_CB=120V，I _E =0A
V_EB=4V，I _C=0A
VCE=5V，I _C=1mA
VCE=5V，I _C=10mA
VCE=5V，I _C=50mA
I _C=10mA，I _B=1mA
I _C=50mA，I _B=5mA
I _C=10mA，I _B=1mA
I _C=50mA，I _B=5mA
VCE=10V，I _E=-10mA
VCB=10V，I _E=0A，f=1MHz
VEB=0.5V，I c=0A，f=1MHz
MARKING
Type Name
CJE
LIMITS
MIN TYP MAX
180
-
-
6
-
-
160
-
-
-
-
100
-
-
100
72
-
-
72
-
330
27
-
-
-
-
0.15
-
-
0.2
-
-
1.0
-
-
1.0
100
-
300
-
1.7
6
-
-
20
UNIT
V
V
V
nA
nA
-
-
-
V
V
V
V
MHz
pF
pF
ISAHAYA ELECTRONICS CORPORATION