INC6005AP1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

DESCRIPTION
INC6005AP1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage V_CEO = 400V
APPLICATION
DC-DC converter, High voltage switching.
<SMALL-SIGNAL TRANSISTOR>
INC6005AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：ｍｍ
1.5
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EM_ＥI_:T_エTE_ミR_ッタ
C：C^ＣO^:LL^コE^レCT^クO^タR
Ｂ: ベース
B：BASE
JEITA:SC-62
EJ_{JEIAEDJDEEC: C}S:_:C_S-_O6_T2_-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO
Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO
Collector to Emitter voltage
I_C
Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
RATING
400
7
400
100
500
＋150
-55～＋150
UNIT
V
V
V
mA
mW
℃
℃
ELECTRICAL CHARACTERISTICS （Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
IEBO
ｈＦＥ
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
I _C=50μA，I _E=0mA
I _E=50μA，I _C=0mA
I _C=1mA，R_BE=∞
V_CB=400V，I _E=0mA
V_EB=6V，I C=0mA
VCE=10V，I C=10mA
I C=10mA，I _B=1mA
V_CE=20V, I _E=-10mA
V_CE=10V, I _E=0mA, f=1MHz
MARKING
Type Name
BD
LOT №
W
h_FE ITEM
LIMITS
MIN TYP MAX
400
-
-
7
-
-
400
-
-
-
-
1
-
-
1
82
-
280
-
-
0.5
-
70
-
-
3.3
-
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION