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INC5005AC1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE | |||
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PRELIMINARY
Noticeï¼This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INC5005AC1 is a silicon NPN epitaxial type transistor.
It is designed with high collector current and small VCE(sat).
FEATURE
ã»Super mini package for easy mounting
ã»High collector current(IC=1.5A)
ã»Low collector saturation voltage
(VCEï¼satï¼<0.5Vmaxï¼IC=800mAãIB=80mA)
APPLICATION
Switching, Small type motor drive
INC5005AC1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNITï¼mm
â
â¡
â¢
MAXIMUM RATINGï¼Ta=25âï¼
SYMBOL
PARAMETER
VCEO Collector to Emitter voltage
VCBO Collector to Base voltage
VEBO
Emitter to Base voltage
IC
Collector current
PC
Collector dissipation(Ta=25â)
Tj
Junction temperature
Tstg
Storage temperature
Terminal Connector
â ï¼Base
â¡ï¼Emitter
â¢ï¼Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
25
45
6
1.5
200
ï¼150
-55ï½ï¼150
UNIT
V
V
V
A
mW
â
â
MARKING
Type Name
CCH
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ï½ï¼¦ï¼¥1
ï½ï¼¦ï¼¥2
ï½ï¼¦ï¼¥3
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage
B to E saturation voltage
B to E on voltage
Gain bandwidth product
Collector output capacitance
I C=1mAï¼I B=0mA
I C=100μAï¼I E=0mA
I E=100μAï¼I C=0mA
VCB=45Vï¼I E =0mA
VEB=6Vï¼I C=0mA
VCE=1Vï¼I C=5mA
VCE=1Vï¼I C=100mA
VCE=1Vï¼I C=100mA
I C=800mAï¼I B=80mA
I C=800mAï¼I B=80mA
VCE=1Vï¼I C=10mA
VCE=10Vï¼I E=-50mAï¼f=100MHz
VCB=10Vï¼f=1MHz
LIMITS
MIN TYP MAX
25
-
-
45
-
-
6
-
-
-
- 0.1
-
- 0.1
45
-
-
85
- 300
40
-
-
- 0.28 0.5
- 0.28 0.5
- 0.66 1
100 300 -
- 6.5 -
UNIT
V
V
V
μA
μA
-
-
-
V
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
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