INC5004AP1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INC5004AP1 is a silicon NPN transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・E to B High voltage V_EBO=9V
・High collector current I_CM=8A
・Low voltage VCE(sat)=0.28V(Type)
APPLICATION
Inverter, Stroboscope flash
DC-DC converter, High current switching
<SMALL-SIGNAL TRANSISTOR>
INC5004AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：ｍｍ
1.5
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EM_ＥI_:T_エTE_ミR_ッタ
C：C^ＣO^:LL^コE^レCT^クO^タR
Ｂ: ベース
B：BASE
JEITA:SC-62
EJ_{JEIAEDJDEEC: C}S:_:C_S-_O6_T2_-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
RATING
V_CBO
Collector to Base voltage
50
V_EBO
Emitter to Base voltage
9
V_CEO
Collector to Emitter voltage
20
I_C
Collector current(P_C=2W)
5
I _CM
Peak collector current *1
8
Collector dissipation(Ta=25℃)
500
P_C
Collector dissipation(Ta=25℃) *2
2
T_j
Junction temperature
＋150
T_stg
Storage temperature
-55～＋150
*1 Single pulse Pw=10msec
*2 Mounted on a glass ceramics board (46mm×19mm×0.8mm)
ELECTRICAL CHARACTERISTICS（Ta=25℃）
UNIT
V
V
V
A
A
mW
mW
℃
℃
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
IEBO
hFE1
hFE2
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
I _C=10μA，I _E=0A
I _E=10μA，I _C=0A
I _C=1mA，R_BE=∞
V_CB=40V，I _E=0A
V_EB=7V，I C=0A
VCE=2V，I C=500mA
VCE=2V，I C=2A
I C=3A，I _B=100mA
V_CE=6V, I _E=-50mA
V_CE=10V, I _E=0A, f=1MHz
MARKING
Type Name
BJ
W
LOT №
h_FE ITEM
LIMITS
MIN TYP MAX
50
-
-
9
-
-
20
-
-
-
-
100
-
-
100
230
-
600
150
-
-
-
0.28 0.8
-
150
-
-
-
50
UNIT
V
V
V
nA
nA
-
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION