|
INC5004AC1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE | |||
|
PRELIMINARY
Noticeï¼This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INC5004AC1 is a silicon NPN epitaxial type transistor.
It is designed with high collector current and small VCE(sat).
FEATURE
ã»Super mini package for easy mounting
ã»High collector current(IC=5A)
ã»Low collector saturation voltage
(VCEï¼satï¼<0.8Vmaxï¼IC=3AãIB=100mA)
APPLICATION
Switching, Small type motor drive
INC5004AC1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNITï¼mm
â
â¡
â¢
MAXIMUM RATINGï¼Ta=25âï¼
SYMBOL
PARAMETER
VCEO Collector to Emitter voltage
VCBO Collector to Base voltage
VEBO
Emitter to Base voltage
IC
Collector current
PC
Collector dissipation(Ta=25â)
Tj
Junction temperature
Tstg
Storage temperature
Terminal Connector
â ï¼Base
â¡ï¼Emitter
â¢ï¼Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
20
50
9
5
200
ï¼150
-55ï½ï¼150
UNIT
V
V
V
A
mW
â
â
MARKING
Type Name
CBM
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
ï½ï¼¦ï¼¥1
ï½ï¼¦ï¼¥2
VCE(sat)
fT
Cob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
I C=1mAï¼I B=0mA
I C=10μAï¼I E=0mA
I E=10μAï¼I C=0mA
VCB=40Vï¼I E =0mA
VEB=7Vï¼I C=0mA
VCE=2Vï¼I C=500mA
VCE=2Vï¼I C=2A
I C=3Aï¼I B=100mA
VCE=6Vï¼I E=-50mAï¼f=100MHz
VCB=10Vï¼f=1MHz
LIMITS
MIN TYP MAX
20
-
-
50
-
-
9
-
-
-
- 0.1
-
- 0.1
230 - 600
150 -
-
- 0.28 0.8
- 150 -
-
-
50
UNIT
V
V
V
μA
μA
-
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
|
▷ |