INC5003AH1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – SILICON NPN EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
FEATURE
・Linearity of hFE is good
・Low voltage VCE(sat) = 250mV(MAX),Ic=2A
・Complementary INA5003AH1
<TRANSISTOR>
INC5003AH1
SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
6.60
5.34
UNIT：ｍｍ
2.30
0.50
APPLICATION
Motor drive, IGBT drive, DC/DC convertor
1
2
3
2.286
0.76
JEITA:SC-63
JEDEC:TO-252
0.127max
0.50
TERMINAL CONNECTOR
（1）BASE
（2）COLLECTOR
（3）EMITTER
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO
Collector to Base voltage
V_CEO
Collector to Emitter voltage
V_EBO
Emitter to Base voltage
I_C
Collector current
I _CP
Collector current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
ELECTRICAL CHARACTERISTICS（Ta=25℃）
TEST CONDITIONS
-
-
-
DC
Pulse(PW=<300us, Duty cycle=<10%)
Ta=25℃
Tc=25℃
-
-
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
hFE1
hFE2
C to B break down voltage
C to E break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
VCE(sat) C to E saturation voltage
VBE(sat)
fT
Cob
ton
tstg
tf
B to E saturation voltage
Gain band width product
Collector output capacitance
Turn on time
Storage time
Fall time
Ic=100uA
Ic=10mA
I_E=100uA
V_CB=120V
V_EB=6V
V_CE=1V, Ic=2A
V_CE=1V, Ic=5A
I_C=2A, I_B=100mA
I_C=6A, I_B=300mA
I_C=6A, I_B=300mA
V_CE=10V, I_E=-100mA
VCB=10V, IE=0A, f=1MHz
IC=3A, IB1=-IB2=0.15A
V_CC=30V, R_L=10Ω
V_BB=7.5V
RATING
150
60
6
6
10
1
10
＋150
-55～＋150
UNIT
V
V
V
A
A
W
W
℃
℃
LIMITS
MIN TYP MAX
150
-
-
60
-
-
6
-
-
-
-
1
-
-
1
120 200 300
75
-
-
-
150 250
-
450 600
-
-
1.3
-
120
-
-
50
-
-
-
0.3
-
-
1.5
-
-
0.3
UNIT
V
V
V
μA
μA
-
-
mV
mV
V
MHz
pF
μs
μs
μs
ISAHAYA ELECTRONICS CORPORATION