INC5001AP1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – For low frequency power amplify Silicon NPN Epitaxial

DESCRIPTION
INC5001AP1 is a silicon NPN epitaxial transistor designed for relay
drive or Power supply application.
FEATURE
●Small package for easy mounting.
●High voltage VCEO=60V
●High collector current IC=1A
●Low VCE(sat) VCE（sat）=0.25V max（@IC=500mA/ IB=50mA）
●High collector dissipation PC=500mW
APPLICATION
Relay drive, power supply for audio equipment, VTR, etc
INC5001AP1
For low frequency power amplify
Silicon NPN Epitaxial
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：ｍｍ
1.5
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
Ｅ: ^Eエ^：ミ^EMッ^ITタ^TER
Ｃ: _Cコ_：レ_COク_Lタ_LECTOR
Ｂ: ベース
B：BASE
EIAJ : SC-62
JEDEC :
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO
Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO
Collector to Emitter voltage
I_C
Collector current
I _CM
Peak Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
ELECTRICAL CHARACTERISTICS （Ta=25℃）
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
IEBO
ｈＦＥ
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
RATING
80
5
60
1
2
500
＋150
-55～＋150
UNIT
V
V
V
A
mW
℃
℃
TEST CONDITIONS
I _C=10μA，I _E=0mA
I _E=10μA，I _C=0mA
I _C=1mA，R_BE=∞
V_CB=80V，I _E =0mA
V_EB=5V，I C=0mA
VCE=4V，IC=0.1A
IC=500mA，I _B=50mA
VCE=10V，IE=-50mA
VCB=10V，IE=0mA，f=1MHz
MARKING
Type Name
AY
W
LOT №
h_FE ITEM
LIMITS
MIN TYP MAX
80
5
60
0.1
0.1
130
320
0.25
150
10
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION