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INC5001AC1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE (mini type) | |||
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TENTATIVE
This is not a final specification.
Some parameters are subject to change.
DESCRIPTION
INC5001AC1 is a super mini package resin sealed
silicon NPN epitaxial transistor,
It is designed for relay draive or Power supply application.
.
FEATURE
âSuper mini package for easy mounting
âLow VCE(sat) VCE(sat)=0.25V max(@IC=500mA/IB=50mA)
âHigh collector current IC=1A
âHigh voltage VCEO=60V
ãSMALL-SIGNAL TRANSISTORã
INC5001AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON NPN EPITAXIAL TYPE (mini type)
OUTLINE DRAWING
2.5
0.5
1.5 0.5
Unitï¼ï½ï½
â
â¡
â¢
APPLICATION
Relay drive, Power supply for audio equipment, VTR , etc
MAXIMUM RATINGSï¼Ta=25âï¼
Symbol
VCBO
VEBO
VCEO
IC
ICM
PC
Tj
Tstg
Parameter
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Peak collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
Unit
80
V
5
V
60
V
1
A
2
A
200
mW
ï¼150
â
-55ï½ï¼150 â
JEITAï¼SC-59
TERMINAL CONNECTER
â ï¼BASE
â¡ï¼EMITTER
â¢ï¼COLLECTOR
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
Parameter
Symbol
Test conditions
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E Saturation Voltage
Gain bandwidth product
Collector output capacitance
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
I C=10μA , I E=0
I E=10μA , I C=0
I C=1mA ,R BE=â
V CB=80V, I E=0mA
V EB=5V, I C=0mA
V CE=4V, I C=0.1A
I C=500mA ,IB=50mA
V CE=10V, I E=-50mA
V CB=10V, I E=0mA,f=1MHz
Limits
Unit
Min Typ Max
80
-
-
V
5
-
-
V
60
-
-
V
-
-
0.1
uA
-
-
0.1
uA
130
-
320
-
-
0.25
V
-
240
-
MHz
-
-
10
pF
ISAHAYA ELECTRONICS CORPORATION
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