INC1001AC1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION SILICON NPN EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
INC1001AC1
FOR GENERAL PURPOSE HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
INC1001AC1 is a silicon NPN epitaxial type transistor.
It is designed with high collector current and small V_CE(sat).
FEATURE
・Super mini package for easy mounting
・High collector current(I_C=500mA)
・Low collector saturation voltage
(V_{CE（sat）}<0.25V_max；IC=100mA、IB=10mA)
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNIT：mm
①
②
③
APPLICATION
For switching, Small type motor drive
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CEO
Collector to Emitter voltage
V_CBO Collector to Base voltage
V_EBO
Emitter to Base voltage
I_C
Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
*Mounted on glass epoxy board(46mm×19mm×1mm)
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
80
80
7
0.5
200
500（*）
＋150
-55～＋150
UNIT
V
V
V
A
mW
℃
℃
MARKING
Type Name
CFD
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
ｈＦＥ1
ｈＦＥ2
VCE(sat)
fT
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
Gain bandwidth product
I _C=1mA，I _B=0mA
I _C=100μA，I _E=0mA
I _E=100μA，I _C=0mA
V_CB=80V，I _E =0mA
V_EB=7V，I _C=0mA
VCE=1V，I _C=10mA
VCE=1V，I _C=100mA
I _C=100mA，I _B=10mA
VCE=2V，I _E=-10mA，f=100MHz
LIMITS
MIN TYP MAX
80
-
-
80
-
-
7
-
-
-
- 0.15
-
- 0.15
105 -
-
95
-
-
-
- 0.3
100 -
-
UNIT
V
V
V
μA
μA
-
-
V
MHz
ISAHAYA ELECTRONICS CORPORATION