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INA6006AP1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE
DESCRIPTION
INA6006AP1 is a silicon PNP transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage VCEO = -150V
・Low voltage VCE(sat) = -0.5V(MAX)
・Complementary : INC6006AP1
APPLICATION
High voltage switching.
<SMALL-SIGNAL TRANSISTOR>
INA6006AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
UNIT:mm
1.5
E CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E: Eエ:ミEMッITタTER
C: Cコ:レCOクLタLECTOR
B: ベース
B:BASE
JEITA:SC-62
EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDEC:―
MAXIMUM RATING(Ta=25℃)
SYMBOL
VCBO
VEBO
VCEO
I CM
IC
PC
Tj
Tstg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Peak collector current
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
ELECTRICAL CHARACTERISTICS(Ta=25℃)
SYMBOL
PARAMETER
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
hFE1
hFE2
hFE3
VCE(sat)1
VCE(sat)2
VBE(sat)1
VBE(sat)2
VBE(on)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
DC forward current gain3
C to E saturation voltage1
C to E saturation voltage2
B to E saturation voltage1
B to E saturation voltage2
B to E on voltage
Gain bandwidth product
Collector output capacitance
RATING
-160
-5
-150
-200
-100
500
+150
-55~+150
UNIT
V
V
V
mA
mA
mW
℃
℃
TEST CONDITIONS
I C=-100μA,I E=0mA
I E=-10μA,I C=0mA
I C=-1mA,RBE=∞
VCB=-120V,I E =0mA
VEB=-3V,I C=0mA
VCE=-5V,I C=-1mA
VCE=-5V,I C=-10mA
VCE=-5V,I C=-50mA
I C=-10mA,I B=-1mA
I C=-50mA,I B=-5mA
I C=-10mA,I B=-1mA
I C=-50mA,I B=-5mA
VCE=-5V,I C=-10mA
VCE=-10V,I E=10mA
VCB=-10V,I E=0mA,f=1MHz
MARKING
Type Name
BE
W
LOT №
hFE ITEM
LIMITS
MIN TYP MAX
-160
-
-
-5
-
-
-150
-
-
-
-
-100
-
-
-100
45
-
-
90
-
270
45
-
-
-
-
-0.2
-
-
-0.5
-
-
-1.0
-
-
-1.0
-
-
-0.77
100
-
300
-
2.8
6
UNIT
V
V
V
nA
nA
-
-
-
V
V
V
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION