INA6005AC1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INA6005AC1 is a silicon PNP transistor.
It is designed with high voltage.
FEATURE
・Super mini package for easy mounting
・High voltage V_CEO=-400V
APPLICATION
DC/DC convertor, High voltage switching
INA6005AC1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNIT：mm
①
②
③
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO Collector to Base voltage
V_EBO
Emitter to Base voltage
V_CEO Collector to Emitter voltage
I_C
Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
-400
-7
-400
-100
200
＋150
-55～＋150
UNIT
V
V
V
mA
mW
℃
℃
MARKING
Type Name
ALA
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
I_EBO
ｈ_ＦＥ
V_CE(sat)
f_T
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain bandwidth product
Collector output capacitance
I _C=-50μA，I _E=0mA
I _E=-50μA，I _C=0mA
I _C=-1mA，R _BE=∞
V_CB=-400V，I _E =0mA
V_EB=-6V，I _C=0mA
V_CE=-10V，I _C=-10mA
I _C=-20mA，I _B=-2mA
V_CE=-20V，I _E=10mA，f=100MHz
V_CB=-10V，I _E=0mA，f=1MHz
LIMITS
MIN TYP MAX
-400 -
-
-7
-
-
-400 -
-
-
-
-1
-
-
-1
82
- 200
-
- -0.6
-
65
-
- 5.5 -
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION