INA6001AP1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INA6001AP1 is a silicon PNP transistor.
It is designed with high voltage.
FEATURE
・Small package for easy mounting.
・High voltage V_CEO = -100V
・High collector current Ic=-1A
・Low voltage VCE(sat) = -0.5V(MAX)
APPLICATION
Relay drive, Power supply
<SMALL-SIGNAL TRANSISTOR>
INA6001AP1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
4.6 MAX
1.6
UNIT：ｍｍ
1.5
E ^CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
マーキング
MARKING
TER電MIN極A接L C続ONNECTOR
E：EM_ＥI_:T_エTE_ミR_ッタ
C：C^ＣO^:LL^コE^レCT^クO^タR
Ｂ: ベース
B：BASE
JEITA:SC-62
EJ_{JEIAEDJDEEC: C}S:_:C_S-_O6_T2_-89
JEDEC：―
MAXIMUM RATING（Ta=25℃）
SYMBOL
V_CBO
V_EBO
V_CEO
I_C
P_C
T_j
T_stg
PARAMETER
Collector to Base voltage
Emitter to Base voltage
Collector to Emitter voltage
Collector current
Collector dissipation(Ta=25℃)
Junction temperature
Storage temperature
RATING
-120
-6
-100
-1
500
＋150
-55～＋150
UNIT
V
V
V
A
mW
℃
℃
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CBO
V_(BR)EBO
V_(BR)CEO
I_CBO
I_EBO
ｈＦＥ1
ｈＦＥ2
VCE(sat)
VBE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
I _C=-100μA，I _E=0mA
I _E=-100μA，I _C=0mA
I _C=-10mA，R_BE=∞
V_CB=-120V，I _E =0mA
V_EB=-6V，I _C=0mA
V_CE=-2V，I _C=-150mA
V_CE=-5V，I _C=-1A
I _C=-500mA，I _B=-50mA
I _C=-500mA，I _B=-50mA
V_CE=-5V，I _E=50mA
V_CB=-10V，I _E=0mA，f=1MHz
MARKING
Type Name
BG
W
LOT №
h_FE ITEM
MIN
-120
-6
-100
-
-
140
40
-
-
100
-
LIMITS
TYP
-
-
-
-
-
-
-
-
-
-
-
MAX
-
-
-
-500
-500
330
-
-0.5
-1.1
-
10
UNIT
V
V
V
nA
nA
-
-
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION