INA5008AH1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – SILICON PNP EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
FEATURE
・Low voltage VCE(sat) = -0.4V(MAX),Ic=-500mA
APPLICATION
Small type machine low frequency voltage amplify application,
Switching
OUTLINE DRAWING
6.60
5.34
<TRANSISTOR>
INA5008AH1
SILICON PNP EPITAXIAL TYPE
UNIT：ｍｍ
2.30
0.50
1
2
3
2.286
0.76
JEITA:SC-63
JEDEC:TO-252
0.127max
0.50
TERMINAL CONNECTOR
（1）BASE
（2）COLLECTOR
（3）EMITTER
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CBO
Collector to Base voltage
V_CEO
Collector to Emitter voltage
V_EBO
Emitter to Base voltage
I_C
Collector current
P_C
Collector dissipation
T_j
Junction temperature
T_stg
Storage temperature
TEST CONDITIONS
-
-
-
DC
Ta=25℃
Tc=25℃
-
-
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
I_CBO
I_EBO
ｈＦＥ
VCE(sat)
C to B break down voltage
C to E break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
TEST CONDITIONS
I _C=-50μA
I _C=-1mA
I _E=-50μA
V_CB=-60V
V_EB=-5V
V_CE=-2V，I _C=-200mA
I _C=-500mA，I _B=-50mA
RATING
-80
-80
-5
-1
1
10
＋150
-55～＋150
UNIT
V
V
V
A
W
W
℃
℃
LIMITS
MIN TYP MAX
-80
-
-
-80
-
-
-5
-
-
-
-
-1.0
-
-
-1.0
80
-
420
-
-
-0.4
UNIT
V
V
V
μA
μA
-
V
ISAHAYA ELECTRONICS CORPORATION