INA5006AC1 Datasheet, PDF (1/2 Pages) Isahaya Electronics Corporation – FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE

PRELIMINARY
Notice：This is not a final specification
Some parametric are subject to change.
DESCRIPTION
INA5006AC1 is a silicon PNP epitaxial type transistor.
It is designed with high collector current and small V_CE(sat).
FEATURE
・Super mini package for easy mounting
・High collector current(I_C=-3A)
・Low collector saturation voltage
(V_{CE（sat）}<-0.2V_max；I_C=-1A、I_B=-33mA)
APPLICATION
Audiovisual apparatus, Relay drive
INA5006AC1
FOR HIGH CURRENT DRIVE APPLICATION
SILICON PNP EPITAXIAL TYPE
OUTLINE DRAWING
2.8
0.65 1.5 0.65
UNIT：mm
①
②
③
MAXIMUM RATING（Ta=25℃）
SYMBOL
PARAMETER
V_CEO
Collector to Emitter voltage
V_CBO Collector to Base voltage
V_EBO
Emitter to Base voltage
I_C
Collector current
P_C
Collector dissipation(Ta=25℃)
T_j
Junction temperature
T_stg
Storage temperature
Terminal Connector
①：Base
②：Emitter
③：Collector
JEITA:SC-59
JEDEC: Similar to TO-236
RATING
-50
-50
-7
-3
200
＋150
-55～＋150
UNIT
V
V
V
A
mW
℃
℃
MARKING
Type Name
AEJ
ELECTRICAL CHARACTERISTICS（Ta=25℃）
SYMBOL
PARAMETER
TEST CONDITIONS
V_(BR)CEO
V_(BR)CBO
V_(BR)EBO
I_CBO
I_EBO
ｈ_{ＦＥ1}
ｈ_{ＦＥ2}
V_CE(sat)
V_BE(sat)
f_T
Cob
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain1
DC forward current gain2
C to E saturation voltage
B to E saturation voltage
Gain bandwidth product
Collector output capacitance
I _C=-10mA，I _B=0mA
I _C=-100μA，I _E=0mA
I _E=-100μA，I _C=0mA
V_CB=-50V，I _E =0mA
V_EB=-7V，I _C=0mA
V_CE=-2V，I _C=-300mA
V_CE=-2V，I _C=-1A
I _C=-1A，I _B=-33mA
I _C=-1A，I _B=-33mA
V_CE=-2V，I _E=300mA，f=100MHz
V_CB=-10V，f=100MHz
LIMITS
MIN TYP MAX
-50 -
-
-50 -
-
-7
-
-
-
- -0.1
-
- -0.1
200 - 500
100 -
-
-
- -0.2
-
- -1.1
- 180 -
-
20
-
UNIT
V
V
V
μA
μA
-
-
V
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION