|
INA5002AP1 Datasheet, PDF (1/4 Pages) Isahaya Electronics Corporation – For low frequency power amplify Silicon PNP Epitaxial | |||
|
DESCRIPTION
INA5002AP1 is a silicon PNP epitaxial transistor designed for relay
drive or Power supply application.
FEATURE
âSmall package for easy mounting.
âHigh voltage VCEO=-60V
âHigh collector current IC=-3A
âLow VCE(sat) VCEï¼satï¼=-0.6V maxï¼@IC=-3A/ IB=-300mAï¼
âHigh collector dissipation PC=500mW
APPLICATION
DCï½¥DC converter, Relay drive, Motor drive etc
INA5002AP1
For low frequency power amplify
Silicon PNP Epitaxial
OUTLINE DRAWING
4.6 MAX
1.6
UNITï¼ï½ï½
1.5
E CB
0.53
MAX
1.5
3.0
0.4
0.48 MAX
ãã¼ãã³ã°
MARKING
TERé»MIN極Aæ¥L Cç¶ONNECTOR
ï¼¥: Eã¨ï¼ãEMãITã¿TER
ï¼£: Cã³ï¼ã¬COã¯Lã¿LECTOR
ï¼¢: ãã¼ã¹
Bï¼BASE
JEITA:SC-62
EJJEIAEDJDEEC: CS::CS-O6T2-89
JEDECï¼â
MAXIMUM RATINGï¼Ta=25âï¼
SYMBOL
PARAMETER
VCBO
Collector to Base voltage
VEBO
Emitter to Base voltage
VCEO
Collector to Emitter voltage
IC
Collector current
I CM
Peak Collector current
PC
Collector dissipation(Ta=25â)
Tj
Junction temperature
Tstg
Storage temperature
ELECTRICAL CHARACTERISTICSï¼Ta=25âï¼
RATING
-80
-6
-60
-3
-6
500
ï¼150
-55ï½ï¼150
UNIT
V
V
V
A
mW
â
â
SYMBOL
PARAMETER
TEST CONDITIONS
V(BR)CBO
V(BR)EBO
V(BR)CEO
ICBO
IEBO
ï½ï¼¦ï¼¥
VCE(sat)
fT
Cob
C to B break down voltage
E to B break down voltage
C to E break down voltage
Collector cut off current
Emitter cut off current
DC forward current gain
C to E saturation voltage
Gain band width product
Collector output capacitance
I C=-100μAï¼I E=0mA
I E=-100μAï¼I C=0mA
I C=-1mAï¼RBE=â
VCB=-60Vï¼I E =0mA
VEB=-4Vï¼I C=0mA
VCE=-2Vï¼IC=-0.5A
IC=-3Aï¼I B=-300mA
VCE=-5Vï¼IE=100mA
VCB=-10Vï¼IE=0mAï¼f=1MHz
MARKING
Type Name
BA
W
LOT â
hFE ITEM
LIMITS
MIN TYP MAX
-80
-
-
-6
-
-
-60
-
-
-
-
-1.0
-
-
-1.0
100
-
300
-
-
-0.5
-
200
-
-
25
-
UNIT
V
V
V
μA
μA
-
V
MHz
pF
ISAHAYA ELECTRONICS CORPORATION
|
▷ |